With forward bias to a pn junction , the width of depletion layer
With forward bias to a pn junction , the width of depletion layer
In an intrinsic semiconductor, the number of free electrons
In an intrinsic semiconductor, the number of free electrons
A pn junction acts as a ___________
A pn junction acts as a ___________
As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ___________
As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ___________
A semiconductor has generally ___________ valence electrons.
A semiconductor has generally ___________ valence electrons.
A forward biased pn junction diode has a resistance of the order of
A forward biased pn junction diode has a resistance of the order of
A reverse biased pn junction has resistance of the order of
A reverse biased pn junction has resistance of the order of
A semiconductor is formed by bonds.
A semiconductor is formed by bonds.
When a pentavalent impurity is added to a pure semiconductor, it becomes
When a pentavalent impurity is added to a pure semiconductor, it becomes
When a pure semiconductor is heated, its resistance ___________
When a pure semiconductor is heated, its resistance ___________
When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on
When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on
An n-type semiconductor is
An n-type semiconductor is
Addition of trivalent impurity to a semiconductor creates many
Addition of trivalent impurity to a semiconductor creates many
The most commonly used semiconductor is ___________
The most commonly used semiconductor is ___________
The strength of a semiconductor crystal comes from
The strength of a semiconductor crystal comes from
A reverse bias pn junction has ___________
A reverse bias pn junction has ___________
A semiconductor has ___________ temperature coefficient of resistance.
A semiconductor has ___________ temperature coefficient of resistance.
A pentavalent impurity has ___________ Valence electrons
A pentavalent impurity has ___________ Valence electrons
In the depletion region of a pn junction, there is a shortage of
In the depletion region of a pn junction, there is a shortage of
At room temperature, an intrinsic silicon crystal acts approximately as
At room temperature, an intrinsic silicon crystal acts approximately as
The impurity level in an extrinsic semiconductor is about of pure semiconductor.
The impurity level in an extrinsic semiconductor is about of pure semiconductor.
The barrier voltage at a pn junction for germanium is about
The barrier voltage at a pn junction for germanium is about
At room temperature, an intrinsic semiconductor has ___________
At room temperature, an intrinsic semiconductor has ___________
A hole in a semiconductor is defined as ___________
A hole in a semiconductor is defined as ___________
Addition of pentavalent impurity to a semiconductor creates many
Addition of pentavalent impurity to a semiconductor creates many
The random motion of holes and free electrons due to thermal agitation is called ___________
The random motion of holes and free electrons due to thermal agitation is called ___________
In a semiconductor, current conduction is due to
In a semiconductor, current conduction is due to
The leakage current in a pn junction is of the order of
The leakage current in a pn junction is of the order of
The leakage current across a pn junction is due to ___________
The leakage current across a pn junction is due to ___________
A trivalent impurity has valence electrons
A trivalent impurity has valence electrons
At absolute temperature, an intrinsic semiconductor has ___________
At absolute temperature, an intrinsic semiconductor has ___________
A hole and electron in close proximity would tend to ___________
A hole and electron in close proximity would tend to ___________
