Addition of trivalent impurity to a semiconductor creates many
Addition of trivalent impurity to a semiconductor creates many
A trivalent impurity has valence electrons
A trivalent impurity has valence electrons
The leakage current across a pn junction is due to ___________
The leakage current across a pn junction is due to ___________
At room temperature, an intrinsic silicon crystal acts approximately as
At room temperature, an intrinsic silicon crystal acts approximately as
An n-type semiconductor is
An n-type semiconductor is
A pn junction acts as a ___________
A pn junction acts as a ___________
A hole and electron in close proximity would tend to ___________
A hole and electron in close proximity would tend to ___________
The leakage current in a pn junction is of the order of
The leakage current in a pn junction is of the order of
A forward biased pn junction diode has a resistance of the order of
A forward biased pn junction diode has a resistance of the order of
The strength of a semiconductor crystal comes from
The strength of a semiconductor crystal comes from
At room temperature, an intrinsic semiconductor has ___________
At room temperature, an intrinsic semiconductor has ___________
A semiconductor is formed by bonds.
A semiconductor is formed by bonds.
When a pure semiconductor is heated, its resistance ___________
When a pure semiconductor is heated, its resistance ___________
As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ___________
As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ___________
A semiconductor has ___________ temperature coefficient of resistance.
A semiconductor has ___________ temperature coefficient of resistance.
Addition of pentavalent impurity to a semiconductor creates many
Addition of pentavalent impurity to a semiconductor creates many
In the depletion region of a pn junction, there is a shortage of
In the depletion region of a pn junction, there is a shortage of
The barrier voltage at a pn junction for germanium is about
The barrier voltage at a pn junction for germanium is about
In an intrinsic semiconductor, the number of free electrons
In an intrinsic semiconductor, the number of free electrons
The random motion of holes and free electrons due to thermal agitation is called ___________
The random motion of holes and free electrons due to thermal agitation is called ___________
The most commonly used semiconductor is ___________
The most commonly used semiconductor is ___________
At absolute temperature, an intrinsic semiconductor has ___________
At absolute temperature, an intrinsic semiconductor has ___________
A reverse bias pn junction has ___________
A reverse bias pn junction has ___________
When a pentavalent impurity is added to a pure semiconductor, it becomes
When a pentavalent impurity is added to a pure semiconductor, it becomes
In a semiconductor, current conduction is due to
In a semiconductor, current conduction is due to
With forward bias to a pn junction , the width of depletion layer
With forward bias to a pn junction , the width of depletion layer
When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on
When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on
A semiconductor has generally ___________ valence electrons.
A semiconductor has generally ___________ valence electrons.
A hole in a semiconductor is defined as ___________
A hole in a semiconductor is defined as ___________
The impurity level in an extrinsic semiconductor is about of pure semiconductor.
The impurity level in an extrinsic semiconductor is about of pure semiconductor.
A pentavalent impurity has ___________ Valence electrons
A pentavalent impurity has ___________ Valence electrons
A reverse biased pn junction has resistance of the order of
A reverse biased pn junction has resistance of the order of
