A diac is turned on by ___________.
A diac is turned on by ___________.
The device that does not have the gate terminal is ___________.
The device that does not have the gate terminal is ___________.
A diac is simply ___________.
A diac is simply ___________.
A diac has ___________ terminals.
A diac has ___________ terminals.
A Triac has three terminals viz ___________
A Triac has three terminals viz ___________
In a UJT, the p-type emitter is ___________ doped
In a UJT, the p-type emitter is ___________ doped
The device that exhibits negative resistance region is ___________.
The device that exhibits negative resistance region is ___________.
The normal way to turn on a diac is by ___________.
The normal way to turn on a diac is by ___________.
A triac is a ___________ switch
A triac is a ___________ switch
A triac can pass a portion of ___________ half-cycle through the load.
A triac can pass a portion of ___________ half-cycle through the load.
The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant
The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant
After peak point, the UJT operates in the ___________ region.
After peak point, the UJT operates in the ___________ region.
The triac is ___________.
The triac is ___________.
A diac has ___________ pn junctions
A diac has ___________ pn junctions
A UJT is sometimes called ___________ diode.
A UJT is sometimes called ___________ diode.
When a UJT is turned ON, the resistance between emitter terminal and lower base terminal ___________
When a UJT is turned ON, the resistance between emitter terminal and lower base terminal ___________
To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage.
To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage.
When the temperature increases, the inter-base resistance (RBB) of a UJT ___________.
When the temperature increases, the inter-base resistance (RBB) of a UJT ___________.
When the temperature increases, the intrinsic stand off ratio ___________.
When the temperature increases, the intrinsic stand off ratio ___________.
Which of the following is not a characteristic of UJT?
Which of the following is not a characteristic of UJT?
When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________.
When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________.
A triac is equivalent to two SCRs ___________.
A triac is equivalent to two SCRs ___________.
Power electronics essentially deals with control of a.c. power at ___________.
Power electronics essentially deals with control of a.c. power at ___________.
The UJT may be used as ___________.
The UJT may be used as ___________.
A diac has ___________ semiconductor layers
A diac has ___________ semiconductor layers
A triac has ___________ semiconductor layers.
A triac has ___________ semiconductor layers.
A UJT has ___________.
A UJT has ___________.
A diac is ___________ switch
A diac is ___________ switch
Between the peak point and the valley point of UJT emitter characteristics we have ___________ region
Between the peak point and the valley point of UJT emitter characteristics we have ___________ region
