In the sale of diamonds the unit of weight is carat. One carat is equal to
In the sale of diamonds the unit of weight is carat. One carat is equal to
The sensitivity of human eyes is maximum at
The sensitivity of human eyes is maximum at
The amount of photoelectric emission current depends on
The amount of photoelectric emission current depends on
The output, V-I characteristics of an Enhancement type MOSFET has
The output, V-I characteristics of an Enhancement type MOSFET has
Assertion (A): A JFET can be used as a current source.
Reason (R): In beyond pinch off region the current in JFET is nearly constant.
Assertion (A): A JFET can be used as a current source.
Reason (R): In beyond pinch off region the current in JFET is nearly constant.
Forbidden energy gap in germanium at 0 K is about
Forbidden energy gap in germanium at 0 K is about
Fermi level is the amount of energy in which
Fermi level is the amount of energy in which
Each cell of a static Random Access memory contains
Each cell of a static Random Access memory contains
What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliver 500 W of d.c. power to the load?
What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliver 500 W of d.c. power to the load?
When avalanche breakdown occurs covalent bonds are not affected.
When avalanche breakdown occurs covalent bonds are not affected.
For a NPN bipolar transistor, what is the main stream of current in the base region?
For a NPN bipolar transistor, what is the main stream of current in the base region?
As compared to bipolar junction transistor, a FET
As compared to bipolar junction transistor, a FET
Which of the following has highest resistivity?
Which of the following has highest resistivity?
The most commonly used semiconductor material is
The most commonly used semiconductor material is
At room temperature the current in an intrinsic semiconductor is due to
At room temperature the current in an intrinsic semiconductor is due to
Piezoelectric quartz crystal resonators find application where
Piezoelectric quartz crystal resonators find application where
In monolithic ICs, all the components are fabricated by
In monolithic ICs, all the components are fabricated by
In a bipolar transistor, the base collector junction has
In a bipolar transistor, the base collector junction has
In a half wave rectifier, the load current flows
In a half wave rectifier, the load current flows
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
Assertion (A): A VMOS can handle much larger current than other field effect transistors.
Reason (R): In a VMOS the conducting channel is very narrow.
Assertion (A): A VMOS can handle much larger current than other field effect transistors.
Reason (R): In a VMOS the conducting channel is very narrow.
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
How many free electrons does a p type semiconductor has?
How many free electrons does a p type semiconductor has?
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction
Assertion (A): In p-n-p transistor collector current is termed negative.
Reason (R): In p-n-p transistor holes are majority carriers.
Assertion (A): In p-n-p transistor collector current is termed negative.
Reason (R): In p-n-p transistor holes are majority carriers.
The forbidden energy gap between the valence band and conduction band will be least in case of
The forbidden energy gap between the valence band and conduction band will be least in case of
The dynamic resistance of a forward biased p-n diode
The dynamic resistance of a forward biased p-n diode
In an ideal diode there is no breakdown, no __________ current, and no forward __________ drop.
In an ideal diode there is no breakdown, no __________ current, and no forward __________ drop.
If too large current passes through the diode
If too large current passes through the diode
An electron in the conduction band
An electron in the conduction band
A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
The depletion layer width of Junction
The depletion layer width of Junction
Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is
Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is
Permalloy is
Permalloy is
Free electrons exist in
Free electrons exist in
Which one of the following is not a characteristic of a ferroelectric material?
Which one of the following is not a characteristic of a ferroelectric material?
A thermistor is a
A thermistor is a
In which of these is reverse recovery time nearly zero?
In which of these is reverse recovery time nearly zero?
Which variety of copper has the best conductivity?
Which variety of copper has the best conductivity?
Which of the following could be the maximum current rating of junction diode by 126?
Which of the following could be the maximum current rating of junction diode by 126?
In a bipolar transistor, the emitter base junction has
In a bipolar transistor, the emitter base junction has
Power diodes are generally
Power diodes are generally
Light dependent resistors are
Light dependent resistors are
In a semiconductor diode, the barrier offers opposition to
In a semiconductor diode, the barrier offers opposition to
Silicon is not suitable for fabrication of light emitting diodes because it is
Silicon is not suitable for fabrication of light emitting diodes because it is
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased
For a P-N diode, the number of minority carriers crossing the junction depends on
For a P-N diode, the number of minority carriers crossing the junction depends on
The sensitivity of human eyes is maximum at
The sensitivity of human eyes is maximum at
